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IRF640N

N-ChannelMOSFETTransistor

•DESCRITION •Efficientandreliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤150mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandre

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF640N

AdvancedProcessTechnology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. TheD2Pakisasurfac

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640NL

PowerMOSFET(Vdss=200V,Rds(on)=0.15ohm,Id=18A)

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF640NL

HEXFETPowerMOSFET

IRF

International Rectifier

IRF640NL

N-ChannelPowerMOSFETs200V,18A,0.15ohm

Features •UltraLowOn-Resistance -rDS(ON)=0.102Ω(Typ),VGS=10V •SimulationModels -TemperatureCompensatedPSPICE®andSABER© ElectricalModels -SpiceandSABER©ThermalImpedanceModels •PeakCurrentvsPulseWidthCurve •UISRateingCurve

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF640NL

AdvancedProcessTechnology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. TheD2Pakisasurfac

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640NL

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-262packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switchingapplic

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF640NL

AdvancedProcessTechnology

IRF

International Rectifier

IRF640NLPBF

HEXFET짰PowerMOSFET

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF640NLPBF

AdvancedProcessTechnologyDynamicdv/dtRating175OperatingTemperature

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

KERSEMI

Kersemi Electronic Co., Ltd.

详细参数

  • 型号:

    ICO-640-STT

  • 制造商:

    Samtec Inc

  • 功能描述:

    CONN DIP SCKT SKT 40 POS 2.54MM SLDR ST TH - Bulk

供应商型号品牌批号封装库存备注价格
SAMTEC
3
全新原装 货期两周
询价
AMIS
05/06+
TQFP80
1064
全新原装100真实现货供应
询价
AMIS
20+
TQFP80
500
样品可出,优势库存欢迎实单
询价
A
24+
b
28
询价
IC-HAUS
24+
baredie
3500
代理渠道现货及订货
询价
FGC
三年内
1983
只做原装正品
询价
IC-HAUS
23+
optoBGA
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
OKI
02+
SOP8
2500
原装现货价格有优势量大可以发货
询价
ADI/亚德诺
22+
66900
原封装
询价
ADI/亚德诺
25+
原封装
8800
公司只做原装,详情请咨询
询价
更多ICO-640-STT供应商 更新时间2025-5-24 16:06:00