IRF640

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

IRF640

18A,200V,0.180Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

IRF640

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

IRF640

iscN-ChannelMOSFETTransistor

DESCRIPTION •DrainCurrent–ID=18A@TC=25℃ •DrainSourceVoltage- :VDSS=200V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) •FastSwitchingSpeed •LowDriveRequirement APPLICATIONS •Designedforlowvoltage,highspeedpowerswitching applicationssuch

IRF640

N-ChannelEnhancementModePOWERMOSFET

Features: *SuperHighDenseCellDesignForLowRDS(ON) RDS(ON)

IRF640

POWERTRMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ◆SiliconGateforFastSwitchingSpeeds ◆LowRDS(on)toMinimizeOn-Losses.SpecifiedatElevated Temp

IRF640

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Description Designedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. Features *RepetitiveAvalancheRated *FastSwitching *EaseofParalleling *SimpleDriveRequirements

IRF640

NCHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

FEATURE NchannelinaplasticTO220package. Theyareintendedforuseinhighspeedpowerswitching,low voltage,relaydriversandgeneralpurposeswitching applications. DC-DC&DC-ACconvertersfortelecom,industrialandlighting equipment. CompliancetoRoHS.

IRF640

18A200VNCHANNELPOWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ◆SiliconGateforFastSwitchingSpeeds ◆LowRDS(on)toMinimizeOn-Losses.SpecifiedatElevated Temp

IRF640

N-ChannelMOSFETusesadvancedtrenchtechnology

Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=200V,ID=18A,RDS(ON)