IRF640中文资料戈采数据手册PDF规格书
IRF640规格书详情
GENERAL DESCRIPTION
This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
FEATURES
◆ Silicon Gate for Fast Switching Speeds
◆ Low RDS(on) to Minimize On-Losses. Specified at Elevated
Temperature
◆ Rugged – SOA is Power Dissipation Limited
◆ Source-to-Drain Characterized for Use With Inductive
Loads
产品属性
- 型号:
IRF640
- 功能描述:
MOSFET N-Chan 200V 18 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO220 |
12000 |
全新原装假一赔十 |
询价 | ||
ST |
23+ |
TO-220 |
65480 |
询价 | |||
2015+ |
200 |
公司现货库存 |
询价 | ||||
IR |
23+24 |
TO-220 |
9860 |
原厂原包装。终端BOM表可配单。可开13%增值税 |
询价 | ||
VISHAY/威世 |
22+ |
TO220 |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
IR |
24+ |
TO-220 |
2000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
原装IR |
TO220 |
15620 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
IR |
06+ |
TO-220 |
12000 |
全新原装 绝对有货 |
询价 | ||
IOR |
24+ |
TO-220 |
4000 |
原装原厂代理 可免费送样品 |
询价 | ||
ST/意法 |
24+ |
TO-220 |
9600 |
原装现货,优势供应,支持实单! |
询价 |