IRF640

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRatedFastSwitching

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

IRF640

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF640areN-channelenhancementmodesilicongatepowerfieldeffecttransistors. Theyaredesigned,testedandguaranteedtowithstandlevelofenergyinbreakdownavalanchemadeofoperation. FEATURES ●RDS(ON)=0.180Ω@VGS=10V ●Ultralowgatecharge(63nCmax.) ●

IRF640

N-ChannelPowerMosfets

18A,200V,0.180Ohm,N-ChannelPowerMosfets TheseareN-Channelenhansementmodesilicongatepowerfieldeffecttransistors.TheyareadvancepowerMOSFETsdesigned,tested,andguaranteedtowithstancdaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepowe

IRF640

SEMICONDUCTORS

IRF640

PowerMOSFET

IRF640A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10A(Max.)@VDS=200V ■LowerRDS(ON):0.144Ω(Typ.)

IRF640A

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •LowRDS(on)=0.144Ω(TYP) •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •RuggedGateOxideTechnology

IRF640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

IRF640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

IRF640FI

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •LowRDS(on)=0.180Ω(TYP) •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •RuggedGateOxideTechnology