丝印：I2PAK；Package：TO-262；Isc N-Channel MOSFET Transistor

• FEATURES • With To-262(I2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：297.01 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：I2PAK；Package：TO-262；Isc N-Channel MOSFET Transistor

• FEATURES • With To-262(I2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：303.08 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：I2PAK；Package：TO-262；nullIsc N-Channel MOSFET Transistor

• FEATURES • With To-262(I2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：303.6 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：I2PAK；Package：TO-262；iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX) • Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：366.87 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：I2PAK；Package：TO-262；Isc N-Channel MOSFET Transistor

• FEATURES • With TO-262(I2PAK) package • Low input capacitance and gate charge • High peak current capability • Improved transconductance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：356.51 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：I2PAK；Package：TO-262；Isc N-Channel MOSFET Transistor

• FEATURES • With To-262(I2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：355.84 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 6.3A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.45Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching a

文件：358.51 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：I2PAK；Package：TO-262；isc N-Channel Mosfet Transistor

• FEATURES • Drain Current ID= 8.5A@ TC=25℃ • Drain Source Voltage- : VDSS=650V(Min) • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：341.97 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：I2PAK；Package：TO-262；Isc N-Channel MOSFET Transistor

• FEATURES • Drain Current –ID= 11A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 360mΩ (Max) • 100 avalanche tested • Low input capacitance and gate charge • Minimum Lot-to-Lot variations for robust device performance and relia

文件：334.4 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：I2PAK；Package：TO-262；isc N-Channel Mosfet Transistor

• FEATURES • Drain Current ID= 12A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：342.02 Kbytes 页数：2 Pages

ISC

无锡固电