I2PAK Package Dimensions

文件：39.3 Kbytes 页数：1 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：I2PAK；Package：TO-262；N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

文件：1.75245 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

丝印：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 11A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.399Ω (Max) • 100 avalanche tested • Minimum Lot-to

文件：342.84 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID=11A@ TC=25℃ • Drain Source Voltage- : VDSS=650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.399Ω (Max) • 100 avalanche tested • Minimum Lot-to-L

文件：342.57 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 15A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.78Ω (Max) • 100 avalanche tested • Minimum Lot-to-

文件：342.97 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 20A@ TC=25℃ • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.199Ω (Max) • 100 avalanche tested • Minimum Lot-to-L

文件：344.36 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 29A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.15Ω (Max) • 100 avalanche tested • Minimum Lot-to-

文件：344.49 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID=4A@ TC=25℃ • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.9Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot

文件：344.51 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID=7A@ TC=25℃ • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.6Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot

文件：344.59 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 7.0A@ TC=25℃ • Drain Source Voltage- : VDSS=650V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.65Ω (Max) • 100 avalanche tested • Minimum Lot-to-L

文件：344.05 Kbytes 页数：2 Pages

ISC

无锡固电