HN1B01F中文资料下载市场行情东芝第2页-114ic电子网

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HN1B01FU-Y	文件：374.88 Kbytes Page：6 Pages	Audio-Frequency General-Purpose Amplifier Applications AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=	TOSHIBAToshiba Semiconductor 东芝株式会社东芝	TOSHIBA
HN1B01F-Y	文件：374.87 Kbytes Page：6 Pages	Audio-Frequency General-Purpose Amplifier Applications Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE	TOSHIBAToshiba Semiconductor 东芝株式会社东芝	TOSHIBA
HN1B01F_07	文件：364.15 Kbytes Page：6 Pages	Silicon NPN Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier Applications	TOSHIBAToshiba Semiconductor 东芝株式会社东芝	TOSHIBA
HN1B01FU	文件：362.98 Kbytes Page：6 Pages	Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications	TOSHIBAToshiba Semiconductor 东芝株式会社东芝	TOSHIBA
HN1B01FU_07	文件：362.98 Kbytes Page：6 Pages	Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications	TOSHIBAToshiba Semiconductor 东芝株式会社东芝	TOSHIBA

更多HN1B01F供应商更新时间2025-7-13 14:00:00