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HN1B01FDW1T1

Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount

ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features •HighVoltageandHighCurrent:VCEO=50V,IC=200mA •HighhFE:hFE=200~400 •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:3A −MachineModel:C •Pb−F

ONSEMION Semiconductor

安森美半导体安森美半导体公司

HN1B01FDW1T1G

Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount

ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features •HighVoltageandHighCurrent:VCEO=50V,IC=200mA •HighhFE:hFE=200~400 •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:3A −MachineModel:C •Pb−F

ONSEMION Semiconductor

安森美半导体安森美半导体公司

HN1B01FDW1T1G

Complementary Dual General Purpose Amplifier Transistor

ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features •HighVoltageandHighCurrent:VCEO=50V,IC=200mA •HighhFE:hFE=200~400 •MoistureSensitivityLevel:1 •ESDRating ♦HumanBodyModel:3A ♦MachineModel:C •SPrefixforAutomo

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    HN1B01FDW1

  • 功能描述:

    两极晶体管 - BJT 200mA 60V Dual Complementary

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
ON
24+
SC74-6
30000
只做原装正品,假壹罚拾!
询价
onsemi(安森美)
23+
SC-74
3022
原厂订货渠道,支持BOM配单一站式服务
询价
onsemi
24+
SC-74,SOT-457
30000
晶体管-分立半导体产品-原装正品
询价
ON/安森美
22+
ORIGINAL
25000
原装现货、假一赔十
询价
ON/安森美
22+
SC-74
12800
本公司只做原装,特价出售!
询价
ONN
23+
N/A
31713
原装原装原装哈
询价
ON/安森美
24+
SC-74
7500
只做原装进口假一赔十全部自己现货库存
询价
INTERSIL
13+
SC74
615
特价热销现货库存
询价
ON
12+
SC74
3000
询价
ON
16+
SOT353
762
原装现货假一罚十
询价
更多HN1B01FDW1供应商 更新时间2024-6-21 17:03:00