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NP80N03DLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=26

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NP80N03DLE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NP80N03EDE

MOSFIELDEFFECTTRANSISTOR

FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=2600pFTYP.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NP80N03EDE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NP80N03EDE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NP80N03ELE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=26

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NP80N03ELE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NP80N03ELE

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NP80N03ELE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NP80N03KDE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

技术参数

  • 封装(Package):

    TO-252

  • 沟道(Polarity):

    N沟道

  • VDS(Max)BVDSS(V):

    30.00V

  • ID(Max)ID(A):

    80.00A

  • IDM:

    170.00A

  • VTH(Typ):

    1.60V

  • VGS:

    20.00V

  • RDS(ON)@-10VTyp(mΩ):

    5.50mΩ

  • RDS(ON)@-4.5VTyp(mΩ):

    7.50mΩ

  • RDS(ON)@-2.5VTyp(mΩ):

    0.00mΩ

  • 直接替代型号(compatible):

    SPB80N03/SPP80N03/AP80N03/PHD80N03/AP75N03/PHD75N03/PHP75N03/FQD75N03

供应商型号品牌批号封装库存备注价格
HMSEMI
24+
TO-252
500238
免费送样原盒原包现货一手渠道联系
询价
VBSEMI/台湾微碧
23+
TO252
50000
全新原装正品现货,支持订货
询价
VBsemi
23+
TO252
50000
全新原装正品现货,支持订货
询价
HMSEMI
2022+
TO-252
5000
原厂代理 终端免费提供样品
询价
H
23+
TO-252
6000
原装正品,支持实单
询价
VBsemi
21+
TO252
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
HMSEMI
23+
TO-252
6800
专注配单,只做原装进口现货
询价
VBsemi
24+
TO252
9000
只做原装正品 有挂有货 假一赔十
询价
H
25+
TO-252
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
HMI
2450+
TO-220
6540
只做原厂原装正品终端客户免费申请样品
询价
更多HM80N03K供应商 更新时间2025-7-29 17:06:00