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NP80N03ELE

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID

文件:96.86 Kbytes 页数:8 Pages

NEC

瑞萨

NP80N03ELE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 26

文件:429.64 Kbytes 页数:12 Pages

RENESAS

瑞萨

NP80N03ELE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:345.59 Kbytes 页数:2 Pages

ISC

无锡固电

NP80N03ELE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

文件:224.27 Kbytes 页数:10 Pages

NEC

瑞萨

NP80N03ELE-E1-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 26

文件:429.64 Kbytes 页数:12 Pages

RENESAS

瑞萨

NP80N03ELE-E2-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 26

文件:429.64 Kbytes 页数:12 Pages

RENESAS

瑞萨

NP80N03ELE_07

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

文件:224.27 Kbytes 页数:10 Pages

NEC

瑞萨

NP80N03ELE-E1-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

文件:224.27 Kbytes 页数:10 Pages

NEC

瑞萨

NP80N03ELE-E2-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

文件:224.27 Kbytes 页数:10 Pages

NEC

瑞萨

NP80N03ELE

Power MOSFETs-Power MOSFETs for Automotive

Renesas

瑞萨

技术参数

  • ID (A):

    80

  • Downloadable:

    SPICE

  • RDS (ON) (mohm) max. @10V or 8V:

    7

  • Nch/Pch:

    N

  • Application:

    Automotive Use

  • Automotive:

    YES

  • Series Name:

    NP Series

  • VDSS (V) max.:

    30

供应商型号品牌批号封装库存备注价格
NEC
24+
TO-263
8866
询价
NEC
6000
面议
19
TO-263
询价
VB
21+
TO-263
10000
原装现货假一罚十
询价
NEC
TO-263
22+
6000
十年配单,只做原装
询价
RENESAS/瑞萨
23+
TO-263
89630
当天发货全新原装现货
询价
RENESAS/瑞萨
22+
TO-263
12500
瑞萨全系列在售,终端可出样品
询价
RENESAS/瑞萨
22+
TO-263
9000
专业配单,原装正品假一罚十,代理渠道价格优
询价
NEC
25+
TO-263
35400
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
IR
23+
TO-263
69820
终端可以免费供样,支持BOM配单!
询价
NEC
25+
SOT-263
4500
全新原装、诚信经营、公司现货销售
询价
更多NP80N03ELE供应商 更新时间2025-11-20 15:30:00