IKP20N60TA

600Vlowlossswitchingseriesthirdgeneration

IKW20N60T

IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode

LowLossDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode •VerylowVCE(sat)1.5V(typ.) •MaximumJunctionTemperature175°C •Shortcircuitwithstandtime–5µs •Designedfor: -FrequencyConverters -UninterruptedPowerS

IKW20N60T

LowLossDuoPack:IGBTinTrenchStopandFieldstoptechnology

IKW20N60T

IGBTinTrenchStop짰andFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode

IKW20N60T

IGBTinTRENCHSTOPandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode

IKW20N60TA

DesignedforDC/ACconvertersforAutomotiveApplication

LowLossDuoPack:IGBTinTrenchStop®andFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode •AutomotiveAECQ101qualified •DesignedforDC/ACconvertersforAutomotiveApplication •VerylowVCE(sat)1.5V(typ.) •MaximumJunctionTemperature175°C

ISPP20N60CFD

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.22Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISPW20N60CFD

iscN-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤220mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IXDP20N60B

HighVoltageIGBTwithoptionalDiode

VCES=600V IC25=32A VCE(sat)typ=2.2V Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultr

IXFH20N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.