GaAs (Low Drift)

AKM

旭化成微电子

Package：4-SMD 模块；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：传感器，变送器 磁性传感器 - 线性，罗盘（IC） 描述：SENSOR HALL EFFECT ANALOG 4SOP

Asahi Kasei Microdevices/AKM

MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

文件：154.8 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

文件：154.8 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TMOS BROADBAND RF POWER FET

40 W, 500 MHz TMOS BROADBAND RF POWER FET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts Gain = 13 dB Efficie

文件：134.51 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉