丝印：HF5；Package：SC70；Low-Power Single Schmitt-Trigger Inverter

文件：1.69417 Mbytes 页数：39 Pages

TI

德州仪器

丝印：HF5；Package：SC70；Low-Power Single Schmitt-Trigger Inverter

文件：1.69417 Mbytes 页数：39 Pages

TI

德州仪器

丝印：HF5；Package：SC70；Low-Power Single Schmitt-Trigger Inverter

文件：1.69417 Mbytes 页数：39 Pages

TI

德州仪器

丝印：HF5；Package：SC70；Low-Power Single Schmitt-Trigger Inverter

文件：1.69417 Mbytes 页数：39 Pages

TI

德州仪器

丝印：HF541；Package：TVSOP；16-BIT BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

Members of the Texas Instruments WidebusE Family EPIC E (Enhanced-Performance Implanted CMOS) Process Inputs Are TTL-Voltage Compatible Distributed VCC and GND Pins Minimize High-Speed Switching Noise Flow-Through Architecture Optimizes PCB Layout Latch-Up Performance Exceeds 250 mA Per

文件：494.32 Kbytes 页数：16 Pages

TI

德州仪器

丝印：HF541；Package：TVSOP；16-BIT BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

Members of the Texas Instruments WidebusE Family EPIC E (Enhanced-Performance Implanted CMOS) Process Inputs Are TTL-Voltage Compatible Distributed VCC and GND Pins Minimize High-Speed Switching Noise Flow-Through Architecture Optimizes PCB Layout Latch-Up Performance Exceeds 250 mA Per

文件：494.32 Kbytes 页数：16 Pages

TI

德州仪器

丝印：MPS；Package：SOIC8-7B；Fixed Frequency Multi-Mode Flyback Regulator Integrated with Highly Rugged MOSFET

文件：1.57977 Mbytes 页数：24 Pages

MPS

美国芯源

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The HF50-12 is Designed for 12.5 Volt Class AB and Class C Power Amplifier Applications Operating in the 2 to 32 MHz HF Band. FEATURES INCLUDE: • High Gain, 16 dB Typical @ 30 MHz • Emitter Ballasting • Withstands Severe Mismatch

文件：18.94 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI HF50-12F is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely suitable and capable of withstanding high VSRW under operating conditions. FEATURES: • PG =

文件：18.25 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI HF50-12S is Designed for FEATURES: • PG = 16 dB min. at 50 W/30 MHz • IMD3 = -30 dBc max. at 50 W(PEP) • Omnigold™ Metalization System

文件：17.67 Kbytes 页数：1 Pages

ASI