丝印：HFA3128BZ；Package：16LdSOIC；Ultra High Frequency Transistor Arrays

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibi

文件：699.33 Kbytes 页数：14 Pages

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瑞萨

丝印：HFA3128BZ；Package：16LDSOIC；Ultra High Frequency Transistor Arrays

Features • NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz • NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130 • NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V • PNP transistor (fT) . . . . . . . . . . . . . . . .

文件：790.14 Kbytes 页数：16 Pages

RENESAS

瑞萨

丝印：HFA3128BZ；Package：16LdSOIC；Ultra High Frequency Transistor Arrays

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibi

文件：699.33 Kbytes 页数：14 Pages

RENESAS

瑞萨

丝印：HFA3128BZ；Package：16LDSOIC；Ultra High Frequency Transistor Arrays

Features • NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz • NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130 • NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V • PNP transistor (fT) . . . . . . . . . . . . . . . .

文件：790.14 Kbytes 页数：16 Pages

RENESAS

瑞萨

Ultra High Frequency Transistor Arrays

文件：298.68 Kbytes 页数：13 Pages

Intersil