SN74AHCT16541DGVR集成电路（IC）的缓冲器驱动器接收器收发器规格书PDF中文资料

SN74AHCT16541DGVR属于集成电路（IC）的缓冲器驱动器接收器收发器。由德州仪器制造生产的SN74AHCT16541DGVR缓冲器，驱动器，接收器，收发器逻辑缓冲器、驱动器、接收器和收发器允许隔离对某个电路的逻辑信号的访问，以用于另一电路。缓冲器将其输入信号（不变或反相）传递到其输出，并可能用于清除弱信号或驱动负载。在布尔逻辑仿真器中，缓冲器主要用于增加传播延迟。逻辑接收器和收发器允许在数据总线之间进行隔离通信。

Members of the Texas Instruments

WidebusE Family

EPIC E (Enhanced-Performance Implanted

CMOS) Process

Inputs Are TTL-Voltage Compatible

Distributed VCC and GND Pins Minimize

High-Speed Switching Noise

Flow-Through Architecture Optimizes PCB

Layout

Latch-Up Performance Exceeds 250 mA Per

JESD 17

Package Options Include Plastic Shrink

Small-Outline (DL), Thin Shrink

Small-Outline (DGG), and Thin Very

Small-Outline (DGV) Packages and 380-mil

Fine-Pitch Ceramic Flat (WD) Package

Using 25-mil Center-to-Center Spacings

description

The ’AHCT16541 devices are noninverting 16-bit

buffers composed of two 8-bit sections with

separate output-enable signals. For either 8-bit

buffer section, the two output-enable (1OE1 and

1OE2 or 2OE1 and 2OE2) inputs must both be low

for the corresponding Y outputs to be active. If

either output-enable input is high, the outputs of

that 8-bit buffer section are in the high-impedance

state.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup

resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54AHCT16541 is characterized for operation over the full military temperature range of –55°C to 125°C.

The SN74AHCT16541 is characterized for operation from –40°C to 85°C.