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PBSS8110T

100V,1ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS9110T 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM 3.Applications

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS8110T-Q

100V,1ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS9110T-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Qualifiedacc

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS8110X

100V,1ANPNlowVCEsat(BISS)transistor

Features *SOT89package *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highefficiencyleadingtolessheatgeneration

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS8110X

100V,1ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT89(SC-62/TO-243)SMDplasticpackage. PNPcomplement:PBSS9110X. Features ■SOT89package ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapability:ICandICM ■Higheffic

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PBSS8110X

100V,1ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughinSmallSignal(BISS)transistorinaSOT89(SC-62/TO-243)SMDplasticpackage. PNPcomplement:PBSS9110X. Features ■SOT89package ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapability:ICandICM ■Higheffic

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PBSS8110Y

100V,1ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsattransistorinaSOT363(SC-88)plasticpackage. Features ■SOT363package ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficiencyreducesheatgeneration. Applications ■Majorapplicationsegments

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PBSS8110Y

100V,1ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsattransistorinaSOT363(SC-88)plasticpackage. Features ■SOT363package ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficiencyreducesheatgeneration. Applications ■Majorapplicationsegments

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PBSS8110Y

100V,1ANPNlowVCEsat(BISS)transistor

Features *SOT363package *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highefficiencyreducesheatgeneration

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS8110Z

100V,1ANPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS8110Z

100V,1ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highcollectorcurrentgain(hF

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PBSS8110Z

LowVCEsat(BISS)transistors

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PBSS8110Z

100V,1ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsattransistorinaplasticSOT223(SC-73)package. Features ■SOT223package ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficiency,leadingtolessheatgeneration. Applications ■Majorapplication

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PL8110

MILITARY/AEROSPACE

pulse

Pulse Electronics

PL8110

SMTpowerInductors

pulse

Pulse Electronics

PM-8110

T1/CEPTQUADPORTSMDISOLATIONTRANSFORMERS

PMI

Premier Magnetics, Inc.

PN8110

BilletDistributorHoldDownClamp

MALLORYMallory Sonalert Products Inc.

马洛里马洛里MALLORY

PPBSS8110Y

100V,1ANPNlowVCEsat(BISS)transistor

Features *SOT363package *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highefficiencyreducesheatgeneration

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PPBSS8110Y

100V,1ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsattransistorinaSOT363(SC-88)plasticpackage. Features ■SOT363package ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficiencyreducesheatgeneration. Applications ■Majorapplicationsegments

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

RTL8110SBL-VD

INTEGRATEDGIGABITETHERNETCONTROLLER(LOM)

REALTEKRealtek Semiconductor Corp

瑞昱瑞昱半导体公司

RTL8110SBL-VD-LF

INTEGRATEDGIGABITETHERNETCONTROLLER(LOM)

REALTEKRealtek Semiconductor Corp

瑞昱瑞昱半导体公司

产品属性

  • 产品编号:

    H8110RBYA

  • 制造商:

    TE Connectivity Passive Product

  • 类别:

    电阻器 > 通孔式电阻器

  • 系列:

    Holco, Holsworthy

  • 包装:

    散装

  • 容差:

    ±0.1%

  • 功率 (W):

    0.25W,1/4W

  • 成分:

    金属薄膜

  • 特性:

    脉冲耐受

  • 温度系数:

    ±15ppm/°C

  • 工作温度:

    -55°C ~ 155°C

  • 封装/外壳:

    轴向

  • 供应商器件封装:

    轴向

  • 大小 / 尺寸:

    0.098" 直径 x 0.283" 长(2.50mm x 7.20mm)

  • 描述:

    RES 110 OHM 0.1% 1/4W AXIAL

供应商型号品牌批号封装库存备注价格
TE Connectivity
2022+
原厂原包装
6800
全新原装 支持表配单 中国著名电子元器件独立分销
询价
TE
23+
NA
2847
通孔式电阻器
询价
TE-泰科
24+25+/26+27+
车规金属膜电阻
6418
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
Siproin(上海矽朋)
1932+
SOT23
2789
向鸿优势仓库库存-绝对原装正品-不做假货!
询价
Siproin(上海矽朋)
2112+
SOT23
105000
3000个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
Siproin(上海矽朋)
2021+
SOT23
499
询价
SIPROIN上海矽朋
21+ROHS
SOT23
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
更多H8110RBYA供应商 更新时间2024-6-19 15:00:00