100 V, 1 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. Features ■ SOT363 package ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficiency reduces heat generation. Applications ■ Major application segments

文件：117.35 Kbytes 页数：13 Pages

PHI

PHI

100 V, 1 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. Features ■ SOT363 package ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficiency reduces heat generation. Applications ■ Major application segments

文件：185.65 Kbytes 页数：13 Pages

恩XP

100 V, 1 A NPN low VCEsat (BISS) transistor

Features * SOT363 package * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High efficiency reduces heat generation

文件：299.37 Kbytes 页数：14 Pages

NEXPERIA

安世

100 V, 1 A NPN low VCEsat (BISS) transistor

文件：185.65 Kbytes 页数：13 Pages

PHI

PHI

Package：6-TSSOP，SC-88，SOT-363；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 100V 1A 6TSSOP

Nexperia USA Inc.