N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient

文件：77.67 Kbytes 页数：6 Pages

HSMC

华昕

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient

文件：77.67 Kbytes 页数：6 Pages

HSMC

华昕

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient

文件：77.67 Kbytes 页数：6 Pages

HSMC

华昕

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de

文件：171.49 Kbytes 页数：6 Pages

HSMC

华昕

ULTRA Fast Recovery High Voltage Rectifiers

文件：414.47 Kbytes 页数：3 Pages

WEITRON

丝印：H02R；Package：SOT-23(DBV)；SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate

1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：2.44413 Mbytes 页数：47 Pages

TI

德州仪器

丝印：H02R；Package：SOT-23(DBV)；SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate

1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：2.44413 Mbytes 页数：47 Pages

TI

德州仪器

丝印：H02R；Package：SOT-23(DBV)；SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate

1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：2.44413 Mbytes 页数：47 Pages

TI

德州仪器

丝印：H02R；Package：SOT-23(DBV)；SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate

1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：2.44413 Mbytes 页数：47 Pages

TI

德州仪器

丝印：H02R；Package：SOT-23(DBV)；SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate

1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：2.44413 Mbytes 页数：47 Pages

TI

德州仪器