| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：H02；Package：TSSOP8；Dual 2-input NOR gate 文件：210.31 Kbytes 页数：12 Pages | NEXPERIA 安世 | NEXPERIA | ||
3 - 24.5GHz Highpass WB Filter DESCRIPTION DLI’s wide band wirebond (WB) filter utilizes Knowles’ unique multilayer filter technology to enable compact wideband performance. FEATURES · Small Size · Wirebond Configuration · Excellent Repeatability · Moisture Sensitivity Level: MSL1 · Operating & Storage Temp: -55˚C to + 文件：1.42782 Mbytes 页数：4 Pages | JOHANSONMANUFACTURING 楼氏集团 | JOHANSONMANUFACTURING | ||
3 - 24.5GHz Highpass WB Filter DESCRIPTION DLI’s wide band wirebond (WB) filter utilizes Knowles’ unique multilayer filter technology to enable compact wideband performance. FEATURES · Small Size · Wirebond Configuration · Excellent Repeatability · Moisture Sensitivity Level: MSL1 · Operating & Storage Temp: -55˚C to + 文件：1.42782 Mbytes 页数：4 Pages | JOHANSONMANUFACTURING 楼氏集团 | JOHANSONMANUFACTURING | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient 文件：74.96 Kbytes 页数：6 Pages | HSMC 华昕 | HSMC | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient 文件：74.96 Kbytes 页数：6 Pages | HSMC 华昕 | HSMC | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient 文件：74.96 Kbytes 页数：6 Pages | HSMC 华昕 | HSMC | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient 文件：74.96 Kbytes 页数：6 Pages | HSMC 华昕 | HSMC | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient 文件：74.96 Kbytes 页数：6 Pages | HSMC 华昕 | HSMC | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient 文件：77.67 Kbytes 页数：6 Pages | HSMC 华昕 | HSMC | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient 文件：77.67 Kbytes 页数：6 Pages | HSMC 华昕 | HSMC |
技术参数
- Status：
新设计非推荐
- 封装：
SMT3
- 包装数量：
3000
- 最小独立包装数量：
3000
- 包装形态：
Taping
- RoHS：
Yes
- Grade：
Standard
- Package Code：
SOT-346
- JEITA Package：
SC-59
- Package Size[mm]：
2.9x2.8 (t=1.1)
- Number of terminal：
3
- Polarity：
NPN
- Supply voltage VCC 1[V]：
15.0
- Collector current Io (Ic) [A]：
0.6
- Input resistance R1 1 [kΩ]：
2.2
- Collector-Emitter voltage VCEO1[V]：
15.0
- Collector current Io(Ic) [A]：
0.6
- Mounting Style：
Surface mount
- Storage Temperature (Min.)[°C]：
-55
- Storage Temperature (Max.)[°C]：
150
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM |
24+/25+ |
6000 |
原装正品现货库存价优 |
询价 | |||
ROHM |
SOT23 |
2600 |
全新原装进口自己库存优势 |
询价 | |||
ROHM |
24+ |
SOT-23 |
6200 |
新进库存/原装 |
询价 | ||
ROHM |
24+ |
SOT346/3 |
1068 |
原装现货假一罚十 |
询价 | ||
ROHM |
17+ |
SOT23 |
6200 |
100%原装正品现货 |
询价 | ||
ROHM |
2016+ |
SOT23 |
2553 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
ROHM |
17+ |
SOT23/ |
9988 |
原装正品QQ547425301电话17621633780杨小姐 |
询价 | ||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
ROHM |
25+23+ |
Sot-23 |
32411 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ROHM |
2018+ |
SOT23 |
26976 |
代理原装现货/特价热卖! |
询价 |
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