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H02N60F

N-Channel Power Field Effect Transistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

H02N60I

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

H02N60J

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

H02N60S

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

H02N60SE

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

H02N60SF

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

H02N60SI

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

H02N60SJ

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

M02N60

NChannelMOSFET

FEATURE RobustHighVoltageTemination. AvalancheEnergySpecified Source-toDrainDiodeRecoveryTimeComparabletoaDiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircurits IDSSandVDS(on)SpecifiedatElevatedTemperature

STANSON

Stanson Technology

M02N60B

NChannelMOSFET

FEATURE RobustHighVoltageTemination. AvalancheEnergySpecified Source-toDrainDiodeRecoveryTimeComparabletoaDiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircurits IDSSandVDS(on)SpecifiedatElevatedTemperature

STANSON

Stanson Technology

详细参数

  • 型号:

    H02N60F

  • 制造商:

    HSMC

  • 制造商全称:

    HSMC

  • 功能描述:

    N-Channel Power Field Effect Transistor

供应商型号品牌批号封装库存备注价格
HSMC
23+
NA
396
专做原装正品,假一罚百!
询价
H
22+
TO-220F
6000
十年配单,只做原装
询价
23+
TO-220F
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
H
23+
TO-220F
6000
原装正品,支持实单
询价
HJ/华昕
TO-220F
6434
一级代理 原装正品假一罚十价格优势长期供货
询价
H
22+
TO-220F
25000
只做原装进口现货,专注配单
询价
H
25+
TO-TO-220F
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
华昕
1822+
TO-252
9852
只做原装正品假一赔十为客户做到零风险!!
询价
华昕
18+
TO-252
41200
原装正品,现货特价
询价
HSMC
23+
TO252
50000
全新原装正品现货,支持订货
询价
更多H02N60F供应商 更新时间2025-7-22 17:30:00