丝印：H02R；Package：SOT-23(DBV)；SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate

1 Features 1• Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch • Low Static-Power Consumption (ICC = 0.9 μA Max) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：2.44413 Mbytes 页数：47 Pages

TI

德州仪器

丝印：H02R；Package：VSSOP；LOW-POWER DUAL 2-INPUT POSITIVE-NOR GATE

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：816.16 Kbytes 页数：25 Pages

TI

德州仪器

丝印：H02R；Package：VSSOP；LOW-POWER DUAL 2-INPUT POSITIVE-NOR GATE

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：816.16 Kbytes 页数：25 Pages

TI

德州仪器

丝印：H02R；Package：VSSOP；LOW-POWER DUAL 2-INPUT POSITIVE-NOR GATE

1FEATURES • Available in the Texas Instruments NanoStar™ Package • Low Static-Power Consumption (ICC = 0.9 mA Maximum) • Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typical) • Low Noise – Overshoot and Undershoot

文件：816.16 Kbytes 页数：25 Pages

TI

德州仪器

丝印：H020T；Package：TO-220；N-Channel MOSFET uses advanced SGT technology

文件：956.93 Kbytes 页数：4 Pages

DOINGTER

杜因特

Φ22 金属指示灯 H026系列

• 22mm安装孔径；\n• 容易装置拆解的模组设计节省您的组装工时；;

SIRON

胜蓝电气

Φ22 金属急停钮 H029-R

• 22mm安装孔径；\n• 容易装置拆解的模组设计节省您的组装工时；;

SIRON

胜蓝电气

定压输入隔离非稳压系列

HYPOWER

华源电子