N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient

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HSMC

华昕

N Channel MOSFET

FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at Elevated Temperature

文件：169.16 Kbytes 页数：5 Pages

STANSON

司坦森

N Channel MOSFET

FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSSand VDS(on) Specified at Elevated Temperature

文件：221.2 Kbytes 页数：5 Pages

STANSON

司坦森

N-Channel Power MOSFET 600 V, 4.8 

文件：146.41 Kbytes 页数：10 Pages

ONSEMI

安森美半导体