N Channel MOSFET

FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSSand VDS(on) Specified at Elevated Temperature

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STANSON

司坦森

N-Channel Power MOSFET 600 V, 4.8 

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ONSEMI

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.2A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-Channel Power MOSFET 600 V, 4.0 

文件：168.55 Kbytes 页数：10 Pages

ONSEMI

安森美半导体