丝印：GW35NB60S；Package：TO-247；N-channel 35A - 600V - TO-247 Low drop PowerMESH??IGBT

Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. Features ■ Low on-voltage drop (VCEsat) ■ Low input capacitance ■ High current capabil

文件：274.81 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：GW35NC60WD；Package：TO-247；40 A, 600 V ultra fast IGBT

Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery

文件：554.2 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：GW39NC60VD；Package：TO-247；N-CHANNEL 40A - 600V - TO-247 Very Fast PowerMESH??IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. Features ■ Low CRES/ CIES ratio (no cross conduction susceptibility) ■ IGBT co-packaged with ultra fast free-wheeling diode

文件：340.86 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：GW30H65FB；Package：TO-247；Trench gate field-stop IGBT, HB series 650 V, 30 A high speed

文件：1.69367 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

丝印：GW30NC60WD；Package：TO-247；N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH??IGBT

文件：306.03 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：GW30V60F；Package：TO-247；Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

文件：1.47767 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

丝印：GW35HF60W；Package：TO-247；35 A, 600 V Ultrafast IGBT

文件：639.12 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：GW39NC60VD；Package：TO-247；N-channel 40A - 600V - TO-247 Very fast switching PowerMESH??IGBT

文件：323.36 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：GW39NC60VD；Package：TO-247；40 A - 600 V - very fast IGBT

文件：391.02 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：GW39NC60VD；Package：TO-247；N-channel 40A - 600V - TO-247 Very fast switching PowerMESH TM IGBT

文件：285.3 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体