STGW60V60DF

Marking：GW60V60DF；Package：TO-247；Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features •Maximumjunctiontemperature:TJ=175°C •Tail-lessswitchingoff •VCE(sat)=1.85V(typ.)@IC=60A •Tightparameterdistribution •Safeparalleling •Lowthermalresistance •Veryfastsoftrecoveryantiparalleldiode Applications •Photovoltaicinverters •Uninterr

STGWA30H60DFB

Marking：GWA30H60DFB；Package：TO-247；Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThesedevicesarepartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching losstomaximizetheefficiencyofanyfrequency convert

STGWA30N120KD

Marking：GWA30N120KD；Package：TO-247；30 A, 1200 V short circuit rugged IGBT with Ultrafast diode

Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH™p

STGWF30NC60S

Marking：GWF30NC60S；Package：TO-3PF；30 A, 600 V, fast IGBT

Features ■Optimizedperformanceformediumoperating frequenciesupto5kHzinhardswitching ■Lowon-voltagedrop(VCE(sat)) ■Highcurrentcapability Application Motordrive Description ThisdeviceutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betw

STGWT20H60DF

Marking：GWT20H60DF；Package：TO-3P；600 V, 20 A high speed trench gate field-stop IGBT

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STGWT30H60DFB

Marking：GWT30H60DFB；Package：TO-3P；Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThesedevicesarepartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching losstomaximizetheefficiencyofanyfrequency convert

STGWT40H60DLFB

Marking：GWT40H60DLFB；Package：TO-3P；Trench gate field-stop IGBT, HB series 600 V, 40 A high speed

Description ThisdeviceisanIGBTdevelopedusinganadvancedproprietarytrenchgatefieldstopstructure.ThedeviceispartofthenewHBseriesofIGBTs,whichrepresentanoptimumcompromisebetweenconductionandswitchinglossestomaximizetheefficiencyofanyfrequencyconverter.Furth

STGWT60H60DLFB

Marking：GWT60H60DLFB；Package：TO-3P；Trench gate field-stop IGBT, HB series 600 V, 60 A high speed

Description ThisdeviceisanIGBTdevelopedusinganadvancedproprietarytrenchgateandfieldstopstructure.ThedeviceispartofthenewHBseriesofIGBTs,whichrepresentanoptimumcompromisebetweenconductionandswitchinglossestomaximizetheefficiencyofanyfrequencyconverter.F

STGWT60H65DFB

Marking：GWT60H65DFB；Package：TO-3P；Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefieldstop structure.ThesedevicesarepartofthenewHBseriesofIGBTs,which representanoptimumcompromisebetweenconductionandswitchinglossto maximizetheefficiencyofanyfrequencyconverter.

STGWT60V60DF

Marking：GWT60V60DF；Package：TO-3P；Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features •Maximumjunctiontemperature:TJ=175°C •Tail-lessswitchingoff •VCE(sat)=1.85V(typ.)@IC=60A •Tightparameterdistribution •Safeparalleling •Lowthermalresistance •Veryfastsoftrecoveryantiparalleldiode Applications •Photovoltaicinverters •Uninterr