STGW35HF60WDI

Marking：GW35HF60WDI；Package：TO-247；35 A, 600 V ultrafast IGBT with low drop diode

Description ThisultrafastIGBTisdevelopedusinganew planartechnologytoyieldadevicewithtighter switchingenergyvariation(Eoff)versus temperature.ThesuffixWdenotesasubsetof productsdesignedforhighswitchingfrequency operation(over100kHz). Features ■ImprovedEo

STGW35NB60S

Marking：GW35NB60S；Package：TO-247；N-channel 35A - 600V - TO-247 Low drop PowerMESH??IGBT

Description Usingthelatesthighvoltagetechnologybasedon apatentedstriplayout,STMicroelectronicshas designedanadvancedfamilyofIGBTs,the PowerMESH™IGBTs,withoutstanding performances. Features ■Lowon-voltagedrop(VCEsat) ■Lowinputcapacitance ■Highcurrentcapabil

STGW35NC60WD

Marking：GW35NC60WD；Package：TO-247；40 A, 600 V ultra fast IGBT

Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ■Highfrequencyoperation ■LowerCRES/CIESratio(nocross-conduction susceptibility) ■Verysoftultrafastrecovery

STGW39NC60VD

Marking：GW39NC60VD；Package：TO-247；N-CHANNEL 40A - 600V - TO-247 Very Fast PowerMESH??IGBT

Description ThisIGBTutilizestheadvancedPowerMESH™processresultinginanexcellenttrade-offbetweenswitchingperformanceandlowon-statebehaviour. Features ■LowCRES/CIESratio(nocrossconductionsusceptibility) ■IGBTco-packagedwithultrafastfree-wheelingdiode

STGW40H60DLFB

Marking：GW40H60DLFB；Package：TO-247；Trench gate field-stop IGBT, HB series 600 V, 40 A high speed

Description ThisdeviceisanIGBTdevelopedusinganadvancedproprietarytrenchgatefieldstopstructure.ThedeviceispartofthenewHBseriesofIGBTs,whichrepresentanoptimumcompromisebetweenconductionandswitchinglossestomaximizetheefficiencyofanyfrequencyconverter.Furth

STGW40H65DFB

Marking：GW40H65DFB；Package：TO-247；Trench gate field-stop 650 V, 40 A high speed HB series IGBT

Features •Maximumjunctiontemperature:TJ=175°C •Highspeedswitchingseries •Minimizedtailcurrent •Lowsaturationvoltage:VCE(sat)=1.6V(typ.)@IC=40A •Tightparameterdistribution •Safeparalleling •PositiveVCE(sat)temperaturecoefficient •Lowthermalresistance

STGW50H60DF

Marking：GW50H60DF；Package：TO-247；50 A, 600 V field stop trench gate IGBT with Ultrafast diode

Features ■Highspeedswitching ■Tightparametersdistribution ■Safeparalleling ■Lowthermalresistance ■6µsshort-circuitwithstandtime ■Ultrafastsoftrecoveryantiparalleldiode ■Leadfreepackage Applications ■Photovoltaicinverters ■Uninterruptiblepowersupply ■Weldi

STGW60H60DLFB

Marking：GW60H60DLFB；Package：TO-247；Trench gate field-stop IGBT, HB series 600 V, 60 A high speed

Description ThisdeviceisanIGBTdevelopedusinganadvancedproprietarytrenchgateandfieldstopstructure.ThedeviceispartofthenewHBseriesofIGBTs,whichrepresentanoptimumcompromisebetweenconductionandswitchinglossestomaximizetheefficiencyofanyfrequencyconverter.F

STGW60H65DFB

Marking：GW60H65DFB；Package：TO-247；Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefieldstop structure.ThesedevicesarepartofthenewHBseriesofIGBTs,which representanoptimumcompromisebetweenconductionandswitchinglossto maximizetheefficiencyofanyfrequencyconverter.

STGW60H65F

Marking：GW60H65F；Package：TO-247；60 A, 650 V field stop trench gate IGBT

Features ■Highspeedswitching ■Tightparameterdistribution ■Safeparalleling ■Lowthermalresistance ■6μsshort-circuitwithstandtime ■Leadfreepackage Applications ■Photovoltaicinverters ■Uninterruptiblepowersupply ■Welding ■Powerfactorcorrection ■Highswitching