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Marking：GW20NC60V；Package：TO-247；30 A - 600 V - very fast IGBT Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features •Highfrequencyoperationupto50kHz •LowerCRES/CIESratio(nocross-conduction susceptibility) •Highcurrentcapa | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Marking：GW20NC60VD；Package：TO-247；N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH IGBT DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“V”identifiesafamilyoptimizedforhighfrequencyapplications. GeneralFeatures | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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