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STGWA30N120KD

Marking:GWA30N120KD;Package:TO-247;30 A, 1200 V short circuit rugged IGBT with Ultrafast diode

Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH™p

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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