丝印：GWA30N120KD；Package：TO-247；30 A, 1200 V short circuit rugged IGBT with Ultrafast diode

Features ■ Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 μs ■ IGBT co-packaged with Ultrafast free-wheeling diode Applications ■ Motor control Description This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ p

文件：423.46 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

30 A, 1200 V short circuit rugged IGBT with Ultrafast diode

Features ■ Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 μs ■ IGBT co-packaged with Ultrafast free-wheeling diode Applications ■ Motor control Description This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ p

文件：423.46 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体