STGW19NC60H

Marking：GW19NC60H；Package：TO-247；19 A - 600 V - very fast IGBT

Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ■Lowon-voltagedrop(VCE(sat)) ■Highfrequencyoperation Applications ■Highfrequencymotordrives ■SMPSandPFCi

STGW20H60DF

Marking：GW20H60DF；Package：TO-247；600 V, 20 A high speed trench gate field-stop IGBT

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STGW20NC60V

Marking：GW20NC60V；Package：TO-247；30 A - 600 V - very fast IGBT

Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features •Highfrequencyoperationupto50kHz •LowerCRES/CIESratio(nocross-conduction susceptibility) •Highcurrentcapa

STGW20NC60VD

Marking：GW20NC60VD；Package：TO-247；N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“V”identifiesafamilyoptimizedforhighfrequencyapplications. GeneralFeatures

STGW30H60DF

Marking：GW30H60DF；Package：TO-247；600 V, 30 A high speed trench gate field-stop IGBT

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STGW30H60DFB

Marking：GW30H60DFB；Package：TO-247；Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgatefield-stop structure.ThesedevicesarepartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching losstomaximizetheefficiencyofanyfrequency convert

STGW30H60DLFB

Marking：GW30H60DLFB；Package：TO-247；Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThedeviceispartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofany frequencyconve

STGW30N120KD

Marking：GW30N120KD；Package：TO-247；30 A, 1200 V short circuit rugged IGBT with Ultrafast diode

Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH™p

STGW30NC60WD

Marking：GW30NC60WD；Package：TO-247；N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH??IGBT

Description ThisIGBTutilizestheadvancedPowerMESH™processresultinginanexcellenttrade-offbetweenswitchingperformanceandlowon-statebehavior. Features ■Highfrequencyoperation ■LowerCRES/CIESratio(nocross-conductionsusceptibility) ■Verysoftultrafastrecoveryantip

STGW30NC60WD

Marking：GW30NC60WD；Package：TO-247；30 A, 600 V ultra fast IGBT

Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ■Highfrequencyoperation ■LowerCRES/CIESratio(nocross-conduction susceptibility) ■Verysoftultrafastrecovery