丝印：GT2K0P20；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The GT2K0P20D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：628.52 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT2K0P20；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The GT2K0P20K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：857.38 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT2K0P20；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The GT2K0P20KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：892.23 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT2K0P20；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The GT2K0P20M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.03804 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT2K0P20；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The GT2K0P20MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.07321 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT2K0P20；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The GT2K0P20T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：785.14 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT2K0P20；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The GT2K0P20D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：628.52 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT2K0P20；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The GT2K0P20K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：857.38 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT2K0P20；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The GT2K0P20KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：892.23 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT2K0P20；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The GT2K0P20M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.03804 Mbytes 页数：6 Pages

GOFORD

谷峰半导体