Gate Drive Transformer

文件：140.58 Kbytes 页数：1 Pages

ICE

Gate Drive Transformer

文件：184.17 Kbytes 页数：1 Pages

ICE

丝印：GT010N10；Package：TOLL-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT010N10TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：995.9 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT010N10；Package：TOLL-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT010N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.14237 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT010N10；Package：TOLT；N-Channel Enhancement Mode Power MOSFET

Description The GT010N10TT uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：821.3 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT011N03；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT011N03D5E uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：978.14 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT011N03；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT011N03ME uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：905.41 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT011N03；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT011N03TE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：934.61 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT011N03；Package：TOLL-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT011N03TLE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：965.8 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT013N04；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT013N04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：680.85 Kbytes 页数：6 Pages

GOFORD

谷峰半导体