丝印：G50；Package：MLF-62x2；500mA-Peak Output LDO Regulator

文件：405.21 Kbytes 页数：14 Pages

Micrel

麦瑞半导体

丝印：G50T65AK5SD；Package：TO-247；Trench FS technology, positive temperature coefficient;

Features ● Trench FS technology, positive temperature coefficient ● Low on-state voltage drop: VCE(sat) TYP = 1.40V @ IC = 50A, VGE = 15V ● Low turn-off loss Applications ● UPS ● Photovoltaic Inverter ● Charging Station

文件：958.65 Kbytes 页数：10 Pages

CRMICRO

华润微电子

丝印：G50T65MQDC50；Package：TO-247-4LD；IGBT - Power, Co-PAK N-Channel, Field Stop IV, MQ (Medium Speed), TO247-4L 650 V, 1.45 V, 50 A

Using the novel field stop 4th generation IGBT technology and generation 1.5 SiC Schottky Diode technology in TO−247 4−lead package, FGH4L50T65MQDC50 offers the optimum performance with both low conduction and switching losses for high−efficiency operations in various applications, especially

文件：311.41 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：G500P03E；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G500P03IE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：824.95 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G500P03；Package：SOT-23-6L；P-Channel Enhancement Mode Power MOSFET

Description The G500P03LL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：564.9 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G50N03；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The G50N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：991.38 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G50N03；Package：TO-251；N-Channel Enhancement Mode Power MOSFET

Description The G50N03J uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application  Power switch DC/DC converters

文件：783.56 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G50N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G50N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：541.12 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G50N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G50N03KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：925.2 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G50N60HS；Package：PG-TO-247-3；High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tigh

文件：355.61 Kbytes 页数：11 Pages

Infineon

英飞凌