丝印：G58N06；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The G58N06F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：742.44 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G58N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G58N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：676.99 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G58N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G58N06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：969.12 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G58N06；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The G58N06F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：742.44 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G58N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G58N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：676.99 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G58N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G58N06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：969.12 Kbytes 页数：6 Pages

GOFORD

谷峰半导体