丝印：G5H；Package：SOT-23-5；300mA RF ULDO REGULATOR

Features • Up to 300mA Output Current • Excellent ESR Stability • Low Standby Current • Low Dropout Voltage: VDROP = 250mV at 300mA • High Output Accuracy: ±1 • Good Ripple Rejection Ability: 75dB at 100Hz and IOUT = 100μA • Tight Load and Line Regulation • Low Temperature Coefficient • O

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DIODES

美台半导体

丝印：G5H；Package：TSSON；GaAs INTEGRATED CIRCUIT

FEATURES • Low insertion loss : Lins = 0.45 dB TYP. @ f = 1.0 GHz, Vcont (H) = 2.8 V, Vcont (L) = 0 V : Lins = 0.55 dB TYP. @ f = 2.0 GHz, Vcont (H) = 2.8 V, Vcont (L) = 0 V • High isolation : ISL = 21 dB TYP. @ f = 2.0 GHz, Vcont (H) = 2.8 V, Vcont (L) = 0 V • High power : Pin (0.1 dB) = +33.

文件：304.99 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：G5H；Package：TSSON；GaAs INTEGRATED CIRCUIT

FEATURES • Low insertion loss : Lins = 0.45 dB TYP. @ f = 1.0 GHz, Vcont (H) = 2.8 V, Vcont (L) = 0 V : Lins = 0.55 dB TYP. @ f = 2.0 GHz, Vcont (H) = 2.8 V, Vcont (L) = 0 V • High isolation : ISL = 21 dB TYP. @ f = 2.0 GHz, Vcont (H) = 2.8 V, Vcont (L) = 0 V • High power : Pin (0.1 dB) = +33.

文件：304.99 Kbytes 页数：11 Pages

RENESAS

瑞萨

Silicon Power Rectifiers

Edal Series G power rectifiers are stud mounted DO-8 packages. Because the silicon junction is carefully fitted within a glass-to-metal hermetically sealed case, reliable operation is assured, even with extreme humidity and under other severe environmental conditions. The series G power rectifiers

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EDAL