丝印：G500P03；Package：SOT-23-6L；P-Channel Enhancement Mode Power MOSFET

Description The G500P03LL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：564.9 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G500P03E；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G500P03IE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：824.95 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G500P03；Package：SOT-23-6L；P-Channel Enhancement Mode Power MOSFET

Description The G500P03LL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：564.9 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G500P03E；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The G500P03IE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：824.95 Kbytes 页数：6 Pages

GOFORD

谷峰半导体