FGH4L50T65MQDC50中文资料安森美半导体数据手册PDF规格书

厂商型号	FGH4L50T65MQDC50
功能描述	IGBT - Power, Co-PAK N-Channel, Field Stop IV, MQ (Medium Speed), TO247-4L 650 V, 1.45 V, 50 A
丝印标识	G50T65MQDC50
封装外壳	TO-247-4LD
文件大小	311.41 Kbytes
页面数量	9 页
生产厂商	ONSEMI
中文名称	安森美半导体
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-11-1 18:03:00
人工找货	FGH4L50T65MQDC50价格和库存，欢迎联系客服免费人工找货

Using the novel field stop 4th generation IGBT technology and

generation 1.5 SiC Schottky Diode technology in TO−247 4−lead

package, FGH4L50T65MQDC50 offers the optimum performance

with both low conduction and switching losses for high−efficiency

operations in various applications, especially totem pole bridgeless

PFC and Inverter.

特性 Features

• Positive Temperature Coefficient for Easy Parallel Operation

• High Current Capability

• 100 of the Parts are Tested for ILM (Note 2)

• Smooth and Optimized Switching

• Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC = 50 A

• No Reverse Recovery / No Forward Recovery

• Tight Parameter Distribution

• RoHS Compliant

Applications

• Charging Station (EVSE)

• Solar Inverter

• UPS, ESS

• PFC, Converters