丝印：G50N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G50N03KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：925.2 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

MOSFET

Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electro

GOFORD

谷峰半导体

N-Channel Enhancement-Mode MOSFET

文件：109.23 Kbytes 页数：5 Pages

GE

N-Channel Enhancement-Mode MOSFET

Features • Advanced Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency

文件：114.67 Kbytes 页数：5 Pages

GE

N-Channel Enhancement-Mode MOSFET (25V, 50A)

文件：54.5 Kbytes 页数：5 Pages

HSMC

华昕