G50

型号：MIC5219-5.0YMT；Package：MLF-62x2；500mA-Peak Output LDO Regulator

G50T65MQDC50

型号：FGH4L50T65MQDC50；Package：TO-247-4LD；IGBT - Power, Co-PAK N-Channel, Field Stop IV, MQ (Medium Speed), TO247-4L 650 V, 1.45 V, 50 A

Usingthenovelfieldstop4thgenerationIGBTtechnologyand generation1.5SiCSchottkyDiodetechnologyinTO−2474−lead package,FGH4L50T65MQDC50offerstheoptimumperformance withbothlowconductionandswitchinglossesforhigh−efficiency operationsinvariousapplications,especially

G500P03E

型号：G500P03IE；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description TheG500P03IEusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G500P03

型号：G500P03LL；Package：SOT-23-6L；P-Channel Enhancement Mode Power MOSFET

Description TheG500P03LLusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G50N03

型号：G50N03D5；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description TheG50N03D5usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G50N03

型号：G50N03J；Package：TO-251；N-Channel Enhancement Mode Power MOSFET

Description TheG50N03Jusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application  Powerswitch DC/DCconverters

G50N03

型号：G50N03K；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description TheG50N03Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G50N03

型号：G50N03KA；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description TheG50N03KAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

G50N60HS

型号：SGW50N60HS；Package：PG-TO-247-3；High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytigh

G50H65FB2

型号：STGB50H65FB2；Package：D2PAK；Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D²PAK package

Features •Maximumjunctiontemperature:TJ=175°C •LowVCE(sat)=1.55V(typ.)@IC=50A •Minimizedtailcurrent •Tightparameterdistribution •Lowthermalresistance •PositiveVCE(sat)temperaturecoefficient Applications •Welding •Powerfactorcorrection •UPS •Solarin