丝印：G450N06；Package：SOT-223；N-Channel Enhancement Mode Power MOSFET

Description The G450N06HA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：803.51 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G450N10D；Package：DFN5X6DUAL；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G450N10D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：893.03 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G450N10；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The G450N10D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：863.22 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G450P04；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G450P04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：614.59 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G450P04；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G450P04KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：890.77 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G450P15；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The G450P15M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：935.3 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G45P02；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G45P02D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：994.22 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G45P40D3-MT；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G45P40D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：709.62 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G45P40；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G45P40T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：641.91 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

HiRelTM INT-A-Pak 2, PLASTIC HALF-BRIDGE IGBT MODULE

文件：121.82 Kbytes 页数：6 Pages

IRF