丝印：G450N10；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The G450N10D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：863.22 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G450N10D；Package：DFN5X6DUAL；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G450N10D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：893.03 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G450N10；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The G450N10D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：863.22 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G450N10D；Package：DFN5X6DUAL；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G450N10D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：893.03 Kbytes 页数：6 Pages

GOFORD

谷峰半导体