丝印：G4616；Package：SOP-8；N and P Channel Enhancement Mode Power MOSFET

Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Application l Power switch l DC/DC converters

文件：928.16 Kbytes 页数：10 Pages

GOFORD

谷峰半导体

丝印：G4616；Package：SOP-8；N and P Channel Enhancement Mode Power MOSFET

Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Application l Power switch l DC/DC converters

文件：928.16 Kbytes 页数：10 Pages

GOFORD

谷峰半导体