丝印：G45P40；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G45P40T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：641.91 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G45P40D3-MT；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G45P40D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：709.62 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G45P40；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G45P40T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：641.91 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G45P40D3-MT；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G45P40D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：709.62 Kbytes 页数：6 Pages

GOFORD

谷峰半导体