丝印：G400P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G400P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：626 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G400P06；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The G400P06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.03673 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G400P06；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G400P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：902.57 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G400P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G400P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：626 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G400P06；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The G400P06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.03673 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G400P06；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G400P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：902.57 Kbytes 页数：6 Pages

GOFORD

谷峰半导体