G400P06K说明书PDF资料供应商报价GOFORD-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
G400P06K	文件：626 Kbytes Page：6 Pages	丝印：G400P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET Description The G400P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：626 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
G400P06K	文件：300 bytes Page：1 Pages	-60V P Channel TRENCH MOSFET	GOFORD 谷峰半导体	GOFORD
G400P06S	文件：1.03673 Mbytes Page：6 Pages	P-Channel Enhancement Mode Power MOSFET Description The G400P06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：1.03673 Mbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
G400P06T	文件：902.57 Kbytes Page：6 Pages	P-Channel Enhancement Mode Power MOSFET Description The G400P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：902.57 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD

更多G400P06K供应商更新时间2026-1-24 11:06:00