MM3Z4V3

Marking：G4；Package：SOD-323；SURFACE MOUNT ZENER DIODES

FEATURES •PlanarDieConstruction •Ultra-SmallSurfaceMountPackage •Generalpurpose,MediumCurrent •IdeallySuitedforAutomatedAssemblyProcesses

MMSZ5229B

Marking：G4；Package：SOD-123；SOD-123 Plastic-Encapsulate Zener Diodes

Features PlanarDieConstruction Ultra-SmallSurfaceMountPackage Generalpurpose,MediumCurrent 350mWPowerDissipationOnCeramicPBC IdeallySuitedforAutomatedAssemblyProcesses

MMSZ5229B

Marking：G4；Package：SOD-123；ZENER DIODES

PlanarDieConstruction 500mWPowerDissipation 2.4V-75VStandoffVoltage 5%NominalZenerVoltage DesignedforSurfaceMountApplication PlasticMaterial-ULRecognitionFlammability Classification94V-O ThisisaHalogenFreeDevice AllSMCpartsaretraceabletothewaferlot Addit

MMSZ5229BS

Marking：G4；Package：SOD-323；SOD-323 Plastic-Encapsulate Zener Diodes

Features PlanarDieConstruction Ultra-SmallSurfaceMountPackage 350mWPowerDissipationOnCeramicPBC Generalpurpose,MediumCurrent IdeallySuitedforAutomatedAssemblyProcesses

NC7SV14L6X

Marking：G4；Package：MicroPak；TinyLogic ULP-A Inverter with Schmitt-Trigger Input

TheNC7SV14isasingleinverterwithSchmitt−TriggerInputin tinyfootprintpackages.ThedeviceisdesignedtooperateforVCC= 0.9Vto3.6V. Features •Designedfor0.9Vto3.6VVCCOperation •2.0nstPDat3.3V(Typ) •Inputs/OutputsOver−VoltageTolerantupto3.6V •IOFFSu

PBSS5350PAS

Marking：G4；Package：SOT1061D；50 V, 3 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice (SMD)plasticpackagewithvisibleandsolderablesidepads. NPNcomplement:PBSS4350PAS 2.Featuresandbenefits •DFN2020D-3(SOT1061D)package •Lowcollector-emittersaturati

PBSS5350PAS-Q

Marking：G4；Package：SOT1061D；50 V, 3 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice (SMD)plasticpackagewithvisibleandsolderablesidepads. NPNcomplement:PBSS4350PAS-Q 2.Featuresandbenefits •DFN2020D-3(SOT1061D)package •Lowcollector-emittersatura

PDTA113EM

Marking：G4；Package：SC-101；PNP resistor-equipped transistors; R1 = 1 kW, R2 = 1 kW

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

PESD15VS1UL

Marking：G4；Package：SOD882；Unidirectional ESD protection diodes

1.1Generaldescription UnidirectionalElectroStaticDischarge(ESD)protectiondiodesinaSOD882leadlessultra smallSurfaceMountedDevice(SMD)plasticpackagedesignedtoprotectonesignalline fromthedamagecausedbyESDandothertransients. 1.2Featuresandbenefits 1.3Applicatio

PMEG4005EGW-Q

Marking：G4；Package：SOD123；40 V, 0.5 A low VF MEGA Schottky barrier rectifier

1.Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithanintegrated guardringforstressprotectionencapsulatedinsmallSOD123Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Forwardcurrent:IF≤0.5A •Rev