UPG2030TK-E2-A

Marking：G3R；Package：PKG；GaAs INTEGRATED CIRCUIT

FEATURES •Switchcontrolvoltage:Vcont(H)=2.7to5.3V(2.8VTYP.) :Vcont(L)=−0.2to+0.2V(0VTYP.) •Lowinsertionloss:LINS1=0.25dBTYP.@f=0.5to1.0GHz,Vcont=2.8V/0V :LINS2=0.30dBTYP.@f=1.0to2.0GHz,Vcont=2.8V/0V :LINS3=0.35dBTYP.@f=2.0

UPG2134TB-E3

Marking：G3B；GaAs INTEGRATED CIRCUIT

FEATURES •Operationfrequency:fopt=1429to1453MHz(1441MHzTYP.) •Supplyvoltage:VDD1=2.7to3.3V(3.0VTYP.) :VDD2=2.7to4.2V(3.5VTYP.) •Circuitcurrent:IDD=28mATYP.@VDD1=3.0V,VDD2=3.5V,VAGC=2.5V,Pin=-15dBm •Powergain:GP=28dBTYP.@VD

UPG2135TK-E2

Marking：G3C；GaAs INTEGRATED CIRCUIT

FEATURES •Operationfrequency:fopt=1429to1453MHz(1441MHzTYP.) •Supplyvoltage:VDD1=2.7to3.3V(3.0VTYP.) :VDD2=3.0to4.2V(3.5VTYP.) •Circuitcurrent:IDD=35mATYP.@VDD1=3.0V,VDD2=3.5V,VAGC=2.5V,Pin=-16dBm •Powergain:GP=30dBTYP.@VD

UPG2304TK-E2

Marking：G3F；GaAs HBT INTEGRATED CIRCUIT

FEATURES •Operationfrequency:fopt1=679to768MHz(720MHzTYP.) :fopt2=1270to1371MHz(1320MHzTYP.) •Supplyvoltage:VCC=2.7to2.9V(2.8VTYP.) •Lowcurrentconsumption:ICC=3.5mATYP.@VCC=2.8V •Excellentisolation:ISL1=40dBTYP.@fopt1=720MHz,Pin=

XC7SET32GV

Marking：g32；Package：SOT753；2-input OR gate

1.Generaldescription XC7SET32isahigh-speedSi-gateCMOSdevice.Itprovidesa2-inputORfunction. 2.Features •Symmetricaloutputimpedance •Highnoiseimmunity •Lowpowerdissipation •TTLinputlevels •Balancedpropagationdelays •ESDprotection: •HBMJESD22-A114E:exceeds2

AP2112K-1.2TRG1

Marking：G3L；Package：SOT25；600mA CMOS LDO REGULATOR WITH ENABLE

AP2112K-1.8TRG1

Marking：G3M；Package：SOT25；600mA CMOS LDO REGULATOR WITH ENABLE

AP2112K-2.5TRG1

Marking：G3N；Package：SOT25；600mA CMOS LDO REGULATOR WITH ENABLE

AP2112K-3.3TRG1

Marking：G3P；Package：SOT25；600mA CMOS LDO REGULATOR WITH ENABLE

AP2112R5-1.2TRG1

Marking：G37D；Package：SOT89-5；600mA CMOS LDO REGULATOR WITH ENABLE