丝印：G2K；GaAs INTEGRATED CIRCUIT

FEATURES • Supply voltage : VDD1, 2, 3 = 3.1 to 4.4 V (3.6 V TYP.) • Low operation current : IDD1 = 16 mA TYP. @ VDD1 = 3.6 V, f = 925 MHz, Pout = +8 dBm : IDD2 = 28 mA TYP. @ VDD2, 3 = 3.6 V, f = 1 441 MHz, Pout = +8 dBm • High power gain : GP1 = 16 dB TYP. @ VDD1 = 3.6 V, f = 925 MHz, Pin =

文件：223.59 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：G2K；SURFACE MOUNT SILICON RECTIFIERS

文件：85.2 Kbytes 页数：3 Pages

MIC

昌福电子

丝印：G2K2P10；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G2K2P10D3E uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：648.9 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2K2P10S2；Package：SOP-8Dual；Dual P-Channel Enhancement Mode Power MOSFET

Description The G2K2P10S2E uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：834.14 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2K2P10；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The G2K2P10SE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：809.56 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2K3N10；Package：SOT-89；N-Channel Enhancement Mode Power MOSFET

Description The G2K3N10G uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：961.46 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2K3N10；Package：SOT-223；N-Channel Enhancement Mode Power MOSFET

Description The G2K3N10H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：982.02 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2K3N10；Package：SOT-223；N-Channel Enhancement Mode Power MOSFET

Description The G2K3N10HA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.22021 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2K3N10；Package：SOT-23-6-Dual；Dual N-Channel Enhancement Mode Power MOSFET

Description The G2K3N10L6 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：924.54 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G2K6P25；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G2K6P25K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：626.61 Kbytes 页数：6 Pages

GOFORD

谷峰半导体