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G120C

SIDACs

SIDACs IT(RSM) = 1.0 Amperes VBO = 95 thru 280 Volts FEATURES : * Pb / RoHS Free

文件:114.31 Kbytes 页数:1 Pages

EIC

G120C

Color band denotes cathode end

SIDACs IT(RSM) = 1.0 Amperes VBO = 95 thru 280 Volts FEATURES : * Pb / RoHS Free

文件:80.33 Kbytes 页数:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

G120N02D32

丝印:G120N02;Package:DFN3X3-8LDual;DUAL N-Channel Enhancement Mode Power MOSFET

Description The G120N02D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:1.09697 Mbytes 页数:6 Pages

GOFORD

谷峰半导体

G120N03D3

丝印:G120N03;Package:DFN3X3-8L;N-Channel Enhancement Mode Power MOSFET

Description The G120N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:717.41 Kbytes 页数:6 Pages

GOFORD

谷峰半导体

G120N03D32

丝印:G120N03;Package:DFN3X3-8LDual;DUAL N-Channel Enhancement Mode Power MOSFET

Description The G120N03D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:788.9 Kbytes 页数:6 Pages

GOFORD

谷峰半导体

G120P03S2

丝印:G120P03;Package:SOP-8Dual;DUAL P-Channel Enhancement Mode Power MOSFET

Description The G120P03S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:830.93 Kbytes 页数:6 Pages

GOFORD

谷峰半导体

G120P06M

丝印:G120P06;Package:TO-263;P-Channel Enhancement Mode Power MOSFET

Description The G120P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:599.26 Kbytes 页数:6 Pages

GOFORD

谷峰半导体

G120P06T

丝印:G120P06;Package:TO-220;P-Channel Enhancement Mode Power MOSFET

Description The G120P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:492.02 Kbytes 页数:6 Pages

GOFORD

谷峰半导体

G1200

Thick Panel Rubber Grommets

文件:92.06 Kbytes 页数:1 Pages

HEYCO

G1200

For Panels .250 (6,4 mm) to .375 (9,5 mm) Thick

文件:81.47 Kbytes 页数:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

技术参数

  • 输出路数:

    2

  • 隔离电压:

    6000V

  • 输入电压:

    12V(10.8~13.2)

  • 输出电压:

    ±3.3V

  • 尺寸(mm):

    19.50*9.80*12.50

  • 封装形式:

    SIP

供应商型号品牌批号封装库存备注价格
MORNSUN模块
SIP5
3200
原装长期供货!
询价
GMT
17+
NA
6200
100%原装正品现货
询价
ACT
24+/25+
750
原装正品现货库存价优
询价
GMT
24+
SOP
100
询价
GMT
25+
SOP8
115
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
MORNSUN
23+
模块
5000
原装正品,假一罚十
询价
原装GMT
24+
MSOP-8
5000
全现原装公司现货
询价
GMT
1706+
SOP8
8660
只做原装进口,假一罚十
询价
MORNSUN
17+
SIP
9700
全新原装现货QQ:547425301手机17621633780杨小姐
询价
MORNSUN
23+
SIP
3500
全新原装假一赔十
询价
更多G120供应商 更新时间2026-1-17 16:20:00