丝印：G080P06；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The G080P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：887.76 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G080P06；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G080P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：923.56 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G085C03D；Package：DFN3X3-8LDual；N and P Channel Enhancement Mode Power MOSFET

Description The G085C03D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.11033 Mbytes 页数：10 Pages

GOFORD

谷峰半导体

丝印：G085N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G085N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：661.26 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G085N03；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G085N03KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：995.43 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G085P02；Package：TSSOP-8；P-Channel Enhancement Mode Power MOSFET

Description The G085P02TS uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：823.44 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G08N02；Package：SOT-223-3L；N-Channel Trench MOSFET

Description The G08N02H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：556.13 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G08N02；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The G08N02L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：697.26 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G08N03；Package：DFN22；N-Channel Enhancement Mode Power MOSFET

Description The G08N03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Power switch ⚫ DC/DC converters

文件：588.5 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G08N06；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The G08N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.06459 Mbytes 页数：6 Pages

GOFORD

谷峰半导体