丝印：G08；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 页数：9 Pages

ROHM

罗姆

丝印：G08；Package：VSSOP(DGK)；LM4808 Low Voltage High Power Audio Power Amplifier

1FEATURES 2• WSON, VSSOP, and SOIC Surface Mount Packaging • Switch On/Off Click Suppression • Excellent Power Supply Ripple Rejection • Unity-Gain Stable • Minimum External Components APPLICATIONS • Headphone Amplifier • Personal Computers • Portable Electronic Devices KEY SPECIFIC

文件：1.49999 Mbytes 页数：29 Pages

TI

德州仪器

丝印：G08；Package：VSSOP(DGK)；LM4808 Low Voltage High Power Audio Power Amplifier

1FEATURES 2• WSON, VSSOP, and SOIC Surface Mount Packaging • Switch On/Off Click Suppression • Excellent Power Supply Ripple Rejection • Unity-Gain Stable • Minimum External Components APPLICATIONS • Headphone Amplifier • Personal Computers • Portable Electronic Devices KEY SPECIFIC

文件：1.49999 Mbytes 页数：29 Pages

TI

德州仪器

丝印：G08；Package：VSSOP(DGK)；LM4808 Low Voltage High Power Audio Power Amplifier

1FEATURES 2• WSON, VSSOP, and SOIC Surface Mount Packaging • Switch On/Off Click Suppression • Excellent Power Supply Ripple Rejection • Unity-Gain Stable • Minimum External Components APPLICATIONS • Headphone Amplifier • Personal Computers • Portable Electronic Devices KEY SPECIFIC

文件：1.49999 Mbytes 页数：29 Pages

TI

德州仪器

丝印：G08；Package：VSSOP(DGK)；LM4808 Low Voltage High Power Audio Power Amplifier

1FEATURES 2• WSON, VSSOP, and SOIC Surface Mount Packaging • Switch On/Off Click Suppression • Excellent Power Supply Ripple Rejection • Unity-Gain Stable • Minimum External Components APPLICATIONS • Headphone Amplifier • Personal Computers • Portable Electronic Devices KEY SPECIFIC

文件：1.49999 Mbytes 页数：29 Pages

TI

德州仪器

丝印：g08；Package：SOT753；2-input AND gate

1. General description XC7SET08 is a high-speed Si-gate CMOS device. It provides a 2-input AND function. 2. Features and benefits • Symmetrical output impedance • High noise immunity • Low power dissipation • Balanced propagation delays • TTL input levels • ESD protection: • HBM JESD22-A1

文件：199.16 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：G08；Package：DFN；Fixed and Adjustable Current Limiting Power Distribution Switches

文件：3.94238 Mbytes 页数：38 Pages

MICROCHIP

微芯科技

丝印：G080N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The G080N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：661.39 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G080N10；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The G080N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.0175 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G080N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.04223 Mbytes 页数：6 Pages

GOFORD

谷峰半导体